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vishay siliconix dg506b, dg507b document number: 65150 s10-0660-rev. b, 22-mar-10 www.vishay.com 1 precision 16-channel/dual 8-channel cmos analog multiplexers description the dg506b and dg507b ar e high performance analog multiplexers. their ultra-low switch charge injection, low channel capacitance, and low leakage level allows them to achieve superior switching performance. the dg506b is a 16-channel single-ended analog multiplexer designed to connect one of sixteen inputs to a common output as determined by a 4-bit binary address (a0, a1, a2, a3). the dg507b is a dual 8-channel differential analog multiplexer designed to connect one of eight differential inputs to a common dual output as determined by its 3-bit binary address (a0, a1, a2). break-before-make switching action protects against momentary crosstalk between adjacent channels. an on channel conducts current equally well in both directions. in the of f state each channel blocks voltages up to the power supply rails. an enable (en) function allows the user to reset the multiplexer/demultiplexer to all switches off for stacking several devices. all control inputs, addresses (ax) and enable (en) are ttl compatible over the full specified operating temperature range. the dg506b and dg507b are fabricated on an enhanced sg-ii cmos process that ac hieves improved performance on: reduced charge injection, lower device leakage, and minimized parasitic capacitance. as the dg506, dg507 has a long history in the industry with many suppliers offering copies, and in some cases improved variations, with the best in class improvements, the vishay siliconix new version of the dg506b, dg507b are the superior alternatives to what is currently available. applications for the dg506b , dg507b include high speed and high precision data acquisit ion, audio signal switching and routing, ate systems, and avionics. high performance and low power dissipation make them ideal for battery operated and remote instrumentation applications. the dg506b and dg507b hav e the absolute maximum voltage rating extended to 44 v. additionally, single supply operation is also allowed. an epitaxial layer prevents latch-up. the dg506b and dg507b are both available in 28-lead soic and tssop package options with extended temperature range of - 40 c to + 125 c. for more information, refer to vishay siliconix dg506b, dg507b evaluation board note. features ? operate with single or dual power supply ? v+ to v- analog signal swing range ? 44 v power supply maximum rating ? extended operate temperature range: - 40 c to + 125 c ? low leakage typically < 3 pa ? low charge injection - q inj = 1 pc ? low power - i supply : 5 a ? ttl compatible logic ? > 250 ma latch up current per jesd78 ? available in soic28 and tssop28 packages ? superior alternative to: - adg506a, dg506a, hi-506 - adg507a, dg507a, hi-507 ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition benefits ? reduced switching errors ? reduced glitching ? improved data throughput ? reduced power consumption ? increased ruggedness ? wide supply ranges ( 5 v to 20 v) applications ? data acquisition systems ? audio and video signal routing ? ate systems ? medical instrumentation
www.vishay.com 2 document number: 65150 s10-0660-rev. b, 22-mar-10 vishay siliconix dg506b, dg507b functional block diagram and pin configuration dg506b dual-in-line soic and tssop top view v+ s 11 s 10 s 9 nc a 3 d s 2 s 1 gnd a 1 a 2 nc a 0 en v- nc s 8 s 16 s 7 s 15 s 6 s 14 s 5 s 13 s 4 s 12 s 3 1 2 3 4 5 6 7 8 28 27 26 25 24 23 22 21 920 10 19 11 12 18 17 13 16 14 15 decoders/drivers dg507b dual-in-line soic and tssop top view v+ s 3b s 2b s 1b nc nc d a s 2a s 1a gnd a 1 a 2 d b a 0 en v- nc s 8a s 8b s 7a s 7b s 6a s 6b s 5a s 5b s 4a s 4b s 3a 1 2 3 4 5 6 7 8 28 27 26 25 24 23 22 21 920 10 19 11 12 18 17 13 16 14 15 decoders/drivers t o p v iew dg506b plcc decoders/drivers 7 8 9 5 20 19 21 22 23 24 25 1 2 3 4 10 11 12 13 14 15 16 17 18 26 27 28 6 s 13 s 15 s 5 s 12 s 4 s 7 s 11 s 14 s 6 s 3 s 10 s 2 s 9 s 1 s gnd nc nc nc 3 v+ 2 d 1 v- 0 s en a a a a 16 8 dg507b plcc t op v iew a a a s 7b s 5a s 4b s 4a s 7a s 3b s 6b s 6a s 3a s 5b s 2b s 2a s 1b s 1a gnd nc nc d nc v+ d v- en s 2 1 0 s 8b 8a b a decoders/drivers 7 8 9 5 20 19 21 22 23 24 25 1 2 3 4 10 11 12 13 14 15 16 17 18 26 27 28 6
document number: 65150 s10-0660-rev. b, 22-mar-10 www.vishay.com 3 vishay siliconix dg506b, dg507b logic ?0? = v il 0.8 v logic ?1? = v ih 2.4 v x = do not care notes: a. signals on s x , d x or in x exceeding v+ or v- will be clamped by internal diodes . limit forward diode current to maximum current ratings. b. all leads soldered or welded to pc board. c. derate 10.5 mw/c above 70 c. d. derate 10.2 mw/c above 70 c. e. derate 21.2 mw/c above 70 c. truth table dg506b a 3 a 2 a 1 a 0 en on switch x x x x 0 none 0 0 0 0 1 1 0 0 0 1 1 2 0 0 1 0 1 3 0 0 1 1 1 4 0 1 0 0 1 5 0 1 0 1 1 6 0 1 1 0 1 7 1 1 1 1 1 8 1 0 0 0 1 9 1 0 0 1 1 10 1 0 1 0 1 11 1 0 1 1 1 12 1 1 0 0 1 13 1 1 0 1 1 14 1 1 1 0 1 15 1 1 1 1 1 16 truth table dg507b a 2 a 1 a 0 en on switch x x x 0 none 0 0 0 1 1 0 0 0 1 2 0 1 1 1 3 0 1 1 1 4 1 0 0 1 5 1001 6 1 111 7 1 1 1 1 8 ordering information dg506b temp. range package part number - 40 c to 125 c 28-pin soic dg506bew-t1-ge3 28-pin tssop dg506beq-t1-ge3 28-pin plcc DG506BEN-T1-GE3 ordering information dg507b temp. range package part number - 40 c to 125 c 28-pin soic dg507bew-t1-ge3 28-pin tssop dg507beq-t1-ge3 28-pin plcc dg507ben-t1-ge3 absolute maximum ratings parameter limit unit voltages referenced to v- v+ 44 v gnd 25 digital inputs a , v s , v d (v-) - 2 to (v+) + 2 or 20 ma, whichever occurs first current (any terminal) 30 ma peak current, s or d (pulsed at 1 ms, 10 % duty cycle max.) 100 storage temperature (ew, eq, en suffix) - 65 to 150 c power dissipation (packages) b 28-pin wide body soic c 840 mw 28-pin tssop d 817 28-pin plcc e 1693 thermal resistance ( j-a ) b 28-pin wide body soic c 95.3 c/w 28-pin tssop d 97.9 28-pin plcc e 47.3
www.vishay.com 4 document number: 65150 s10-0660-rev. b, 22-mar-10 vishay siliconix dg506b, dg507b specifications parameter symbol test conditions unless otherwise specified v+ = 15 v, v- = - 15 v ( 10 %) v ax , v en = 2.4 v, 0.8 v a temp. b typ. c a suffix - 40 c to 125 c d suffix - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full - 15 15 - 15 15 v drain-source on-resistance r ds(on) v d = 10 v, i s = - 1 ma room 170 300 300 full 400 400 r ds(on) matching r ds(on) v d = 10 v room 10 source off leakage current i s(off) v d = 10 v v s = 10 v v en = 0 v room 0.005 - 1 1 - 1 1 na full - 50 50 - 50 50 drain off leakage current i d(off) dg506b room 0.005 - 1 1 - 1 1 full - 100 100 - 100 100 dg507b room 0.005 - 1 1 - 1 1 full - 50 50 - 50 50 drain on leakage current i d(on) v s = v d = 10 v sequence each switch on dg506b room 0.005 - 1 1 - 1 1 full - 100 100 - 100 100 dg507b room 0.005 - 1 1 - 1 1 full - 50 50 - 50 50 digital control logic high input voltage v inh full 2.4 2.4 v logic low input voltage v inl full 0.8 0.8 logic high input current i ih v ax , v en = 2.4 v full - 1 1 - 1 1 a logic low input current i il v ax , v en = 0.8 v full - 1 1 - 1 1 logic input capacitance e c in f = 1 mhz room 5 pf dynamic characteristics transition time t trans vs 1 = + 10 v/- 10 v, vs 16 = - 10 v/+ 10 v, r l = 1 m , c l = 35 pf see figure 2 room 190 300 300 ns full 360 360 break-before-make interval t open vs 1 = vs 16 = 5.0 v, c l = 35 pf, r l = 1 k , see figure 4 room 84 30 30 full 10 10 enable turn-on time t on(en) vs 1 = 5 v, vs 2 to vs 16 = 0 v, r l = 1 k , c l = 35 pf see figure 3 room 151 250 250 full 310 310 enable turn-off time t off(en) room 53 200 200 full 220 220 charge injection e q inj c l = 1 nf, r gen = 0 , v gen = 0 v full 1 pc off isolation e oirr c l = 5 pf , r l = 50 , f = 1 mhz dg506b room - 85 db dg507b - 84 crosstalk e xtalk c l = 5 pf , r l = 50 , f = 1 mhz dg506b room - 85 dg507b - 84 - 3 db bandwidth e bw r l = 50 dg506b room 114 mhz dg507b 217 total harmonic distortion e thd r l = 10 k , 5 v rms room 0.04 % source off capacitance e c s(off) f = 1 mhz room 3 pf drain off capacitance e c d(off) dg506b room 31 dg507b room 17 drain on capacitance e c d(on) dg506b room 38 dg507b room 24 power supply positive supply current i+ v ax , v en = 0 v or 5 v room 0.005 0.1 0.1 ma full 0.1 0.1 negative supply current i- full - 1 - 1 a
document number: 65150 s10-0660-rev. b, 22-mar-10 www.vishay.com 5 vishay siliconix dg506b, dg507b specifications single supply 12 v parameter symbol test conditions unless otherwise specified v+ = 12 v, v- = 0 v ( 10 %) v ax , v en = 2.4 v, 0.8 v a temp. b typ. c a suffix - 40 c to 125 c d suffix - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full 0 12 0 12 v on-resistance r ds(on) v d = 10 v/0 v, i s = 1 ma room 270 450 450 full 650 650 r ds(on) matching r ds(on) room 10 switch off leakage current i s(off) v+ = 12 v, v- = 0 v v d = 0 v/10 v, v s = 10 v/0 v room 0.005 - 1 1 - 1 1 na full - 50 - 50 - 50 50 i d(off) dg506b room 0.005 - 1 1 - 1 1 full - 100 100 - 100 100 i d(off) dg507b room 0.005 - 1 1 - 1 1 full - 50 50 - 50 50 channel on leakage current i d(on) v+ = 12 v, v- = 0 v v s = v d = 0 v/10 v dg506b room 0.005 - 1 1 - 1 1 full - 100 100 - 100 100 dg507b room 0.005 - 1 1 - 1 1 full - 50 50 - 50 50 digital control logic high input voltage v inh full 2.4 2.4 v logic low input voltage v inl full 0.8 0.8 logic high input current i ih v ax , v en = 2.4 v full - 1 1 - 1 1 a logic low input current i il v ax , v en = 0.8 v full - 1 1 - 1 1 logic input capacitance e c in f = 1 mhz room 5 pf dynamic characteristics transition time t trans vs 1 = 10 v/0 v, vs 16 = 0 v/10 v, r l = 1 m , c l = 35 pf, see figure 2 room 228 380 380 ns full 450 450 break-before-make interval t open vs 1 = vs 16 = 5 v, c l = 35 pf, r l = 1 k , see figure 4 room 115 40 40 full 10 10 enable turn-on time t on(en) vs 1 = 5 v, vs 2 to vs 16 = 0 v, r l = 1 k , c l = 35 pf see figure 3 room 197 300 300 full 420 420 enable turn-off time t off(en) room 46 200 200 full 220 220 charge injection e q inj c l = 1 nf, r gen = 0 , v gen = 0 v full 4 pc off isolation e oirr c l = 5 pf , r l = 50 f = 1 mhz dg506b room - 86 db dg507b - 84 crosstalk e x ta l k c l = 5 pf , r l = 50 f = 1 mhz dg506b room - 85 dg507b - 84 - 3 db bandwidth e bw r l = 50 dg506b room 104 mhz dg507b 191 total harmonic distortion e thd r l = 10 k , 5 v rms , f = 20 hz to 20 khz room 0.23 %
www.vishay.com 6 document number: 65150 s10-0660-rev. b, 22-mar-10 vishay siliconix dg506b, dg507b notes: a. v ax , v en = input voltage perform proper function. b. room = 25 c, full = as determined by the operating temperature suffix. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datash eet. e. guaranteed by design, not subject to production test. f. r ds(on) = r ds(on) max. - r ds(on) min. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. schematic diagram typical channel dynamic characteristics source off capacitance e c s(off) f = 1 mhz room 4 pf drain off capacitance e c d(off) dg506b 37 dg507b 20 channel on capacitance e c d(on) dg506b 43 dg507b 26 power supply power supply current i+ v ax , v en = 0 v, or 5 v room 0.005 0.1 0.1 ma full 0.1 0.1 specifications single supply 12 v parameter symbol test conditions unless otherwise specified v+ = 12 v, v- = 0 v ( 10 %) v ax , v en = 2.4 v, 0.8 v a temp. b typ. c a suffix - 40 c to 125 c d suffix - 40 c to 85 c unit min. d max. d min. d max. d figure 1. en a 0 s 1 d s n decode/ drive level shift v- v + v- v re f a x gnd v- v- v+
document number: 65150 s10-0660-rev. b, 22-mar-10 www.vishay.com 7 vishay siliconix dg506b, dg507b typical characteristics 25 c, unless otherwise noted on-resistance vs. v d and dual supply voltage on-resistance vs. analog voltage and temperature on-resistance vs. analog voltage and temperature 0 50 100 150 200 250 300 350 400 450 500 - 20 - 15 - 10 - 5 0 5 10 15 20 r o n - on-resistance ( ) v d - analog v oltage ( v ) t = 25 c i s = 1 ma v + = + 5.0 v v - = - 5.0 v v + = + 10. 8 v v - = - 10. 8 v v + = + 13.5 v v - = - 13.5 v v + = + 15 v v - = - 15 v v + = + 20 v v - = - 20 v r o n - on-resistance ( ) v d - analog v oltage ( v ) 0 100 200 300 500 600 400 700 - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5 v + = + 5.0 v , v - = - 5.0 v i s = 1 ma + 125 c + 8 5 c + 25 c - 40 c r o n - on-resistance ( ) v d - analog v oltage ( v ) 0 50 100 150 200 250 300 350 400 450 500 - 15 - 10 - 5 0 5 10 15 v + = + 13.5 v , v - = - 13.5 v i s = 1 ma + 125 c + 8 5 c + 25 c - 40 c on-resistance vs. v d and single supply voltage on-resistance vs. analog voltage and temperature on-resistance vs. analog voltage and temperature r o n - on-resistance ( ) v d - analog v oltage ( v ) 50 100 150 200 250 300 350 400 450 500 0246 8 10 12 14 16 1 8 20 t = 25 c i s = 1 ma v + = 10. 8 v v + = 12 v v + = 20 v r o n - on-resistance ( ) v d - analog v oltage ( v ) 0 50 100 150 200 250 300 350 400 450 500 - 15 - 10 - 5 0 5 10 15 v + = + 10. 8 v , v - = - 10. 8 v i s = 1 ma + 125 c + 8 5 c + 25 c - 40 c r o n - on-resistance ( ) v d - analog v oltage ( v ) 0 50 100 150 200 250 300 350 400 450 500 - 15 - 10 - 5 0 5 10 15 v + = + 15 v , v - = - 15 v i s = 1 ma + 125 c + 8 5 c + 25 c - 40 c
www.vishay.com 8 document number: 65150 s10-0660-rev. b, 22-mar-10 vishay siliconix dg506b, dg507b typical characteristics 25 c, unless otherwise noted on-resistance vs. analog voltage and temperature on-resistance vs. analog voltage and temperature supply current vs. input switching frequency r o n - on-resistance ( ) v d - analog v oltage ( v ) 0 500 - 20 - 15 - 10 - 5 0 5 10 15 20 50 100 150 200 250 300 350 400 450 v + = + 20 v , v - = - 20 v i s = 1 ma + 125 c + 8 5 c + 25 c - 40 c r o n - on-resistance ( ) v d - analog v oltage ( v ) 0 700 100 200 300 400 600 50 150 250 350 500 450 650 550 01234567 8 9101112 v + = + 12 v , v - = 0 v i s = 1 ma + 125 c + 8 5 c + 25 c - 40 c 0.0001 0.001 0.01 0.1 10 000 1000 100 10 1 10 100 1k 10k 100k 1m 10m supply current (a) input switching frequency (hz) v+ = + 15 v v- = - 15 v i+ i- i gnd on-resistance vs. analog voltage and temperature on-resistance vs. analog voltage and temperature leakage current vs. analog voltage r o n - on-resistance ( ) v d - analog v oltage ( v ) 0 700 01234567 8 9101112 50 150 250 100 200 300 350 450 550 400 500 600 650 v + = + 10. 8 v , v - = 0 v i s = 1 ma + 125 c + 8 5 c + 25 c - 40 c r o n - on-resistance ( ) v d - analog v oltage ( v ) 0 500 04 8 12 16 2 6 10 14 1 8 20 100 50 200 300 400 150 250 350 450 v + = + 20 v , v - = 0 v i s = 1 ma + 125 c + 8 5 c + 25 c - 40 c - 100 - 80 - 60 - 40 - 20 0 20 40 60 80 100 - 15 - 10 - 5 0 5 10 15 v d - analog voltage (v) leakage current (pa) v = 15 v t = 25 c i s(off) i d(off) i d(on)
document number: 65150 s10-0660-rev. b, 22-mar-10 www.vishay.com 9 vishay siliconix dg506b, dg507b typical characteristics 25 c, unless otherwise noted leakage current vs. temperature insertion loss, off-isolatio n, crosstalk vs. frequency insertion loss, off-isolation, crosstalk vs. frequency - 60 - 40 - 20 0 20 40 60 80 100 120 140 temperature (oc) leakage currrent (pa) 0.1 1 10 100 1000 10 000 v+ = + 15 v v- = - 15 v i s(off) i d(off) i d(on) - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 frequency (hz) 100k loss, oirr, x talk (db) 1m 10m 100m 1g x ta l k (non-adjacent) x ta l k (adjacent) oirr dg506b loss v+ = + 15 v v- = - 15 v r l = 50 - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 frequency (hz) 100k loss, oirr, x talk (db) 1m 10m 100m 1g x ta l k (non-adjacent) x ta l k (adjacent) oirr dg506b v+ = + 12 v v- = 0 v r l = 50 loss switching threshold vs. single supply v insertion loss, off-isolatio n, crosstalk vs. frequency insertion loss, off-isolatio n, crosstalk vs. frequency 2 6 10 14 18 22 26 30 34 0.50 0.75 1.00 1.25 1.50 1.75 2.25 2.00 2.50 v+ - supply voltage switching threshold (v) - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 frequency (hz) 100k loss, oirr, x talk (db) 1m 10m 100m 1g x ta l k (non-adjacent) x ta l k (adjacent) oirr dg507b v+ = + 15 v v- = - 15 v r l = 50 loss - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 frequency (hz) 100k loss, oirr, x talk (db) 1m 10m 100m 1g x talk (non-adjacent) x ta l k (adjacent) oirr dg507b v+ = + 12 v v- = 0 v r l = 50 loss
www.vishay.com 10 document number: 65150 s10-0660-rev. b, 22-mar-10 vishay siliconix dg506b, dg507b typical characteristics 25 c, unless otherwise noted charge injection vs. analog voltage capacitance vs. v analog capacitance vs. v analog q i n j - charge injection (pc) v s - analog v oltage ( v ) - 15 - 20 - 15 - 10 - 5 0 5 10 15 20 - 10 - 5 0 5 10 15 v + = + 15 v v - = - 15 v dg506b t = 25 c v + = + 12 v v - = 0 v capacitance (pf) v analog (v) 0 - 15 - 10 - 5 0 5 10 15 10 20 30 40 50 55 5 15 25 35 45 60 c d(off) c s(off) c d(on) /c s(on) dg506b v = 15 v t = 25 c capacitance (pf) v analog (v) 0 024681011 13579 12 10 30 50 5 20 40 15 35 55 25 45 60 dg506b v+ = + 12 v t = 25 c c d(on) /c s(on) c d(off) c s(off) charge injection vs. analog voltage capacitance vs. v analog capacitance vs. v analog q inj - charge injection (pc) v s - analog voltage (v) - 15 - 20 - 15 - 10 - 5 0 5 10 15 20 - 10 - 5 0 5 10 15 v+ = + 15 v v- = - 15 v dg507b t = 25 c v+ = + 12 v v- = 0 v capacitance (pf) v analog (v) 0 - 15 - 10 - 5 0 5 10 15 10 20 30 5 15 25 35 dg507b v = 15 v t = 25 c c d(on) /c s(on) c d(off) c s(off) capacitance (pf) v analog (v) 0 024681011 13579 12 10 30 5 20 15 25 35 dg507b v+ = + 12 v t = 25 c c d(on) /c s(on) c d(off) c s(off)
document number: 65150 s10-0660-rev. b, 22-mar-10 www.vishay.com 11 vishay siliconix dg506b, dg507b typical characteristics 25 c, unless otherwise noted test circuits thd vs. frequency thd (%) frequency (hz) 0.01 10 1000 100 10 000 100 000 1 0.1 10 r l = 10 k v signal = 5 v rms v = 15 v v = + 12 v figure 2. transition time a 1 a 0 a 2 a 1 a 0 + 15 v - 15 v en v+ v- gnd d 35 pf v o s 1 s 2 - s 7 s 16 1 m 10 v 10 v + 15 v - 15 v en v+ v- gnd 35 pf v o s 1b s 1a - s 4a , d a s 8b 1 m 10 v 10 v d b logic input switch output v s16 v o t tr a n s t r < 20 ns t f < 20 ns s 16 on s 1 on t tr a n s 0 v v s1 50 % 90 % 90 % 3 v 0 v dg506b dg507b 50 + 3.0 v 50 + 3.0 v a 3 a 2
www.vishay.com 12 document number: 65150 s10-0660-rev. b, 22-mar-10 vishay siliconix dg506b, dg507b test circuits figure 3. enable switching time logic input switch output v o t r < 20 ns t f < 20 ns 3 v 0 v 0 v t off(en) t on(en) 50 % 90 % 90 % v o en s 1 s 2 - s 16 a 0 a 1 a 2 50 1 k v o v+ gnd v- d 5 v 35 pf - 15 v + 15 v s 1b s 1a - s 8a , d a s 2b - s 8b d b en a 0 a 1 50 1 k v o v+ gnd v- 5 v 35 pf - 15 v + 15 v dg506b dg507b a 3 a 2 figure 4. break-before-make interval 50 % 80 % logic input switch output v o v o t open t r < 20 ns t f < 20 ns 0 v 3 v 0 v en v+ gnd v- + 5 v 35 pf - 15 v + 15 v + 3.0 v a 2 d b , d all s and d a 1 k v o 50 a 1 a 0 dg506b dg507b a 3
document number: 65150 s10-0660-rev. b, 22-mar-10 www.vishay.com 13 vishay siliconix dg506b, dg507b test circuits vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65150 . figure 5. charge injection a 0 en a x v o v+ gnd v- d - 15 v + 15 v r g s x c l 1 nf channel select 3 v 0 v off on logic input switch output v o v o is the measured voltage due to charge transfer error q, when the channel turns of f . q inj = c l x v o off figure 6. off isolation figure 8. insertion loss r l 50 v out v+ gnd v- - 15 v + 15 v a x d a 0 s 16 s 1 v s en r g = 50 of f isolation = 20 log v ou t v in v in 3 v r l 50 a x v o d r g = 50 insertion loss = 20 log v ou t v in a 0 v s s 1 v+ gnd v- - 15 v + 15 v en v in 3 v figure 7. crosstalk figure 9. source drain capacitance r l 50 v+ gnd v- - 15 v + 15 v a x d a 0 s 16 s x v out en r g = 50 crosstalk = 20 log v out v in v in s 1 v s 3 v r l 50 f = 1 mhz s 1 d en + 15 v - 15 v gnd v+ v- meter impedance analyzer or equivalent s 8 a 0 a x channel select 0 v or 3 v
package information vishay siliconix document number: 71202 06-jul-01 www.vishay.com 1
4.400 notes: 1. package surface: shiny finish (ro 0.15 ? 0.20). 2. package warpage: 0.012 (max). 3. package corner radius: r0.1 mm (max). 4. top to btm cavity mismatch: 0.037 (max). 5. tolerance: 0.050 unless otherwise specified. 6. end flash max: 0.1016 mm. pin 1 indicator 0.70x0.038 0.012 dp surface polished 0.735 0.025 6.400 0.050 1.016 0.025 0.686 0.050 0.432 0.020 0.457 0.020 0.127 typ. 0.1 (ref) 0.625 9.70 0.025 12 (8x) 0.28 typ. 0.65 typ. detail a 5.05 0.050 0.600 0.050 4 2 5 ?8 typ. r0.1?0.15 r0.1?0.15 1.00 0.050 detail a all corner r0.1 (max) 0.050 ecn: s-03946?rev. c, 09-jul-01 dwg: 5851
document number: 71264 www.vishay.com 28-sep-09 1 package information vishay siliconix plcc: 28-lead d 0.101 mm 0.004" d-square d 1 -square b b 1 e 1 a 1 a a 2 d 2 dim. millimeters inches min. max. min. max. a 4.20 4.57 0.165 0.180 a 1 2.29 3.04 0.090 0.120 a 2 0.51 - 0.020 - b 0.331 0.553 0.013 0.021 b 1 0.661 0.812 0.026 0.032 d 12.32 12.57 0.485 0.495 d 1 11.430 11.582 0.450 0.456 d 2 9.91 10.92 0.390 0.430 e 1 1.27 bsc 0.050 bsc ecn: t09-0766-rev. d, 28-sep-09 dwg: 5491
package information www.vishay.com vishay siliconix revision: 01-aug-11 1 document number: 71268 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 soic (wide-body): 28-leads ecn: e11-2209-rev. d, 01-aug-11 dwg: 5850 0.3525 0.001 0.06 0.002d cavity no. 0.295 0.001 0.070 0.005 0.1475 0.001 0.055 0.005 pin 1 indicator 0.047 0.007 0.001 dp surface polished 0.010 0.334 0.005 r0.004 r0.008 r0.009 r0.004 0.032 0.005 4 2 0.041 0.001 0.705 0.001 0.091 0.001 0.017 0.0003 0.050 typ. 0.00825 0.00325 0.098 0.002 0.334 0.005 0.291 0.001 0.295 0.001 0.406 0.004 r0.004 7 (4 ) 0.020 45 detail a detail a 1 2345678 28 27 26 25 24 23 22 21 910 20 19 11 18 12 17 13 16 14 15 all dimensions in inches
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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